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| 2SK3756 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3756 VHF- and UHF-band Amplifier Applications (Note)The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These TOSHIBA products are neither intended nor warranted for any other use.Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment. * * * Output power: PO =32dBmW (typ) Gain: GP = 12dB (typ) Drain efficiency: D = 60% (typ) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gain-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS(Note 1) ID PD (Note 2) Tch Tstg Rating 7.5 3 1 3 150 -45~150 Unit V V A W C C JEDEC Note: JEITA SC-62 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in TOSHIBA 2-5K1D temperature, etc.) may cause this product to decrease in the Weight: 0.05 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Operating Ranges: 0~3V Note 2: Tc = 25C (When mounted on a 0.8 mm glass epoxy PCB) Marking Part No. (or abbreviation code) W D A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot No. 1 2 3 1. Gate 2. Source 3. Drain Caution: This device is sensitive to electrostatic discharge. Please make enough tool and equipment earthed when you handle. 1 2007-11-01 2SK3756 Electrical Characteristics (Ta = 25C) Characteristics Output power Drain efficiency Power gain Threshold voltage Drain cut-off current Gate-source leakage current Symbol PO D GP Vth IDSS IGSS Test Condition VDS = 4.5 V, Iidle = 200 mA (VGS = adjust), f = 470 MHz, Pi = 20dBmW, VDS = 4.5 V, ID =0.5 mA VDS = 10 V, VGS = 0 V VGS = 3 V, VDS = 0 V VDS = 4.5 V, f = 470 MHz, Pi = 20dBmW, Po = 31dBmW (VGS = adjust), VSWR LOAD 10:1 all phase Min 31 50 Typ. 32 60 12 0.95 Max 1.45 10 5 Unit dBmW % dB V A A Load Mismatch (Note 3) No Degradation Note 3: These characteristic values are measured using measurement tools specified by Toshiba. (Test Condition: f = 470 MHz, VDS = 4.5 V, Iidle = 200 mA, Pi = 20 dBmW) C4 Pi ZG = 50 C1 C6 L1 R2 C7 L2 C2 C8 C3 C5 PO ZL = 50 Output Power Test Fixture R1 VGS VDS R1: 6.8 k R2: 56 C1: 20 pF C2: 17 pF C3: 1 pF C4: 2200 pF C5: 2200 pF C6: 10000 pF C7: 2200 pF C8: 10000 pF L1: 0.6 mm enamel wire, 5.5ID, 5T L2: 0.6 mm enamel wire, 5.5ID, 7T Line: 2mm 2 2007-11-01 2SK3756 Po, Gp, D -Pi 40 Gp, D -Iidle 80 15 14 13 f =470MHz Iidle=200mA 35 Vdd=4.5V OUTPUT POWER Po(dBmW) POWER GAIN Gp(dB) 30 70 f =470MHz Pi=20dBmW Vdd=4.5V 80 76 DRAIN EFFICIENCY D(%) 25 50 POWER GAIN Gp(dB) 12 11 10 9 8 7 64 68 72 20 40 15 30 10 20 Po (dBmW) 5 Gp (dB) hD (%) 0 5 10 15 20 25 10 6 5 0 50 100 150 200 Gp (dB) hD (%) 250 60 300 0 0 INPUT POWER Pi(dBmW) GATE IDLE CURRENT Iidle(mA) Po-Pi 40 Pi-Idd 700 f =470MHz Vdd=4.5V 35 f =470MHz Vdd=4.5V 600 OUTPUT POWER Po(dBmW) DRAIN CURRENT Idd(mA) 30 500 25 400 20 300 15 10 200 5 Iidle=50mA Iidle=200mA 0 5 10 15 20 25 100 Iidle=50mA Iidle=200mA 0 5 10 15 20 25 0 0 INPUT POWER Pi(dBmW) INPUT POWER Pi(dBmW) Gp, D -Vdd 18 Po-Pi 80 40 f =470MHz Iidle=200mA 17 Pi=20dBmW 16 f =470MHz Iidle=200mA 35 15 OUTPUT POWER Po(dBmW) DRAIN EFFICIENCY D(%) 30 POWER GAIN Gp(dB) 25 14 70 20 13 15 12 10 Vdd=3.6V 11 Gp hD (%) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 60 5 Vdd=4.5V Vdd=6.0V 0.0 5.0 10.0 15.0 20.0 25.0 10 0 DRAIN VOLTAGE Vdd(V) INPUT POWER Pi(dBmW) 3 2007-11-01 DRAIN EFFICIENCY D(%) 60 2SK3756 Pi-Idd 900 800 700 f =470MHz Iidle=200mA DRAIN CURRENT Idd(mA) 600 500 400 300 200 Vdd=3.6V 100 0 0.0 Vdd=4.5V Vdd=6.0V 5.0 10.0 15.0 20.0 25.0 INPUT POWER Pi(dBmW) Note 4: These are only typical curves and devices are not necessarily guaranteed at these curves. 4 2007-11-01 2SK3756 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN GENERAL * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01 |
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